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P0903BDA
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
ID
30V
9mΩ @VGS = 10V
56A
TO-252
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS
30
Gate-Source Voltage
VGS
±20
Continuous Drain Current Pulsed Drain Current1
TC= 25 °C TC= 100 °C
ID
56 35
IDM
160
Avalanche Current
IAS
31
Avalanche Energy
L=0.1mH
EAS
48
Power Dissipation
TC= 25 °C TC= 100°C
PD
48 19
Junction & Storage Temperature Range
Tj, Tstg
-55 to 150
UNITS V
A
mJ W °C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE Junction-to-Case 1Pulse width limited by maximum junction temperature.
SYMBOL RqJC
TYPICAL
MAXIMUM UNITS
2.6
°C / W
REV 1.
P0903BDA Datasheet
