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P0903BIS
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
25V 9.5Ω @VGS = 10V
ID 57A
TO-251(S)
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 25
Gate-Source Voltage
VGS ±20
Continuous Drain Current Pulsed Drain Current1
TC = 25 °C TC = 100 °C
ID IDM
57 36 160
Avalanche Current
IAS 36
Avalanche Energy
L = 0.1mH
EAS
67
Power Dissipation
TC = 25 °C TC = 100 °C
PD
55 21
Operating Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS V
A
mJ W °C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE Junction-to-Case 1Pulse width limited by maximum junction temperature.
SYMBOL RqJC
TYPICAL MAXIMUM UNITS 2.3 °C / W
REV 1.
P0903BIS Datasheet
