Click to expand full text
P0903BK
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
ID
30V
9mΩ @VGS = 10V
30A
PDFN 5*6P
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS
30
Gate-Source Voltage
VGS
±20
TC = 25 °C
30
(Package Limited)
Continuous Drain Current2
TC = 25 °C(Silicon Limited)
ID
65
Pulsed Drain Current1
TC = 100 °C
41
IDM
150
Continuous Drain Current2
TA = 25 °C TA = 70 °C
13
ID
10
Avalanche Current
IAS
35
Avalanche Energy
L = 0.1mH
EAS
60
Power Dissipation
TC = 25 °C TC = 100 °C
62.5
PD
25
Power Dissipation
TA = 25 °C TA = 70 °C
2.5
PD
1.
P0903BK Datasheet
