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P0903BKB
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
30V 9mΩ @VGS = 10V
ID 49A
PDFN 5*6P
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 30
Gate-Source Voltage
VGS ±20
Continuous Drain Current2 Pulsed Drain Current1
TC = 25 °C TC = 100 °C
ID IDM
49 31 120
Continuous Drain Current
TA = 25 °C TA = 70 °C
ID
12 9.8
Avalanche Current
IAS 29
Avalanche Energy
L = 0.1mH
EAS
42
TC = 25 °C
35
Power Dissipation
TC = 100 °C TA = 25 °C
PD
14 2.2
TA = 70 °C
1.4
Operating Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS V
A
mJ W °C
Ver 1.
P0903BKB Datasheet
