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P0903BV
N-Channel Logic Level Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
30V 9.65mΩ @VGS = 10V
ID 13A
SOP-8
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Gate-Source Voltage
VGS ±20
Continuous Drain Current
Pulsed Drain Current1 Avalanche Current
TA = 25 °C TA = 100 °C
ID
IDM IAS
13 8 50 32
Avalanche Energy
L =0.1mH
EAS
51
Power Dissipation
TA= 25 °C TA =100 °C
Operating Junction & Storage Temperature Range
PD Tj, Tstg
2.5 1 -55 to 150
UNITS V
A
mJ W °C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE Junction-to-Ambient Junction-to-Case 1Pulse width limited by maximum junction temperature.
SYMBOL RqJA RqJC
TYPICAL
MAXIMUM 50 25
UNITS °C / W
REV 1.
P0903BV Datasheet
