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PH3134-65M - Radar Pulsed Power Transistor/ 65W/ 1OOms Pulse/ 10% Duty 3.1 - 3.4 GHz

Features

  • l l l l l l l l .650 (16.51)- NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation High Efficiency Interdigitated Geometry Diffused Emitter Ballasting Resistors Gold Metalization System Internal Input and Output Impedance Matching HermeticMetaVCeramic Package .225.
  • .010 (5.72Z.25) Absolute Maximum Ratings at 25°C .225t010 (5.72i.25) EMIlYER 167i.010 uNLE. ss.

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Other Datasheets by Tyco Electronics
  • PH3134-11S - Radar Pulsed Power Transistor/ 11 W/ lms Pulse/ 10% Duty 3.1 - 3.4 GHz
  • PH3134-30S - Radar Pulsed Power Transistor/ 3OW/ lms Pulse/ 10% Duty 3.1 - 3.4 GHz
  • PH3134-55L - Radar Pulsed Power Transistor/ SW/ 300ms Pulse/ 10% Duty 3.1 - 3.4 GHz
  • PH3134-75S - Radar Pulsed Power Transistor/75W 1ms Pulse/10% Duty 3.1-3.4GHz
  • PH3135-20M - Radar Pulsed Power Transistor/ 20W/100ms Pulse/10% Duty 3.1-3.5 GHz
  • PH3135-25S - Radar Pulsed Power Transistor/25W/2ms Pulse/10% Duty 3.1-3.5GHz
  • PH3135-30M - Radar Pulsed Power Transistor/ 3OW/ IOOms Pulse/ 10% Duty 3.1 - 3.5 GHz
  • PH3135-5M - Radar Pulsed Power Transistor/ 5W/ looms Pulse/ 10% Duty 3.1 - 3.5 GHz

Full PDF Text Transcription

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,-=r=-= ---== ZY * = .-----r f = anAMPcompany Radar Pulsed Power Transistor, 65W, 1OOp Pulse, 10% Duty PH3134-65M 3.1 - 3.4 GHz Features l l l l l l l l .650 (16.51)- NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation High Efficiency Interdigitated Geometry Diffused Emitter Ballasting Resistors Gold Metalization System Internal Input and Output Impedance Matching HermeticMetaVCeramic Package .225*.010 (5.72Z.25) Absolute Maximum Ratings at 25°C .225t010 (5.72i.25) EMIlYER 167i.010 uNLE.ss OTHERWISE NOTED, TOLERANCES ARE (nILLIMETERS * 13nH, INCHES k.005’ Electrical Characteristics at 25°C Broadband Test Fixture impedances F(GHz) Z,(Q) z&4 I 3.10 3.25 11.2-j11.7 11.5-j9.5 I 12.7-j7.6 1 8.1 - j5.3 7.1 - j4.3 6.4-j3.3 ( I 3.
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