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Radar Pulsed Power Transistor, 3OW, IOOps Pulse, 10% Duty PH3135-30M 3.1 - 3.5 GHz
v2.00
Features
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NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation High Effkiency Interdigitated Geometry Diffused Emitter Ballasting Resistors Gold Metalization System Internal Input and Output Impedance Matching Hermetic Metal/Ceramic Package
Absolute Maximum Ratings at 25°C
Parameter ) Symbol Rating Units
Collector-Emitter Voltage Emitter-Base Voltage Collector Current (Peak) Total Power Dissipation JunctionTemperature StorageTemperature
VCES VES0 I^ PTOT TJ TST0
-65
65 3.0 3.6 250 200 to +200
V V A w “C “C
,167~ i-110 7:4.24’.25>
,103 C2.
PH3135-30M Datasheet
