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Radar Pulsed Power Transistor, SW, 300~s Pulse, 10% Duty 3.1 - 3.4 GHz PH3134-55L
Features
NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation High Effkiency Interdigitated Geometty Diffused Emitter Ballasting Resistors Gold Metalization System Internal Input and Output Impedance Matching Hermetic Metal/Ceramic Package
.225+010 (5.?2%2!5>
t
mLEcTIR
+j,j --A +f PAS I .130 (3.30) fl 2%
Absolute Maximum Ratings at 25°C
Parameter Collector-Emitter Voltage Symbol VES Rating 65 Units V
--6.72t.25)
Emitter-Base Voltage
UNLESS OTHERWISE
NOTED, TOLERANCES
ARE
(MIEMH$ER:.
PH3134-55L Datasheet
