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PH3134-11S - Radar Pulsed Power Transistor/ 11 W/ lms Pulse/ 10% Duty 3.1 - 3.4 GHz

Features

  • NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation High Efficiency Interdigitated Geometry Diffused Emitter Ballasting Resistors Gold Metalization System Internal Input and Output Impedance Matching Hermetic Metal/Ceramic Package Absolute Maximum Ratings at 25°C I . I00 I / I ;2.54>--- ,250 -.152-. x0 (3.86-25) 75.35>-7 ,130 -7(3.30:~ I I .034'.031 StorageTemperature T STG -65 to +200 “‘2 UNLESS IT-ERWISE NCTEC,.

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Other Datasheets by Tyco Electronics
  • PH3134-30S - Radar Pulsed Power Transistor/ 3OW/ lms Pulse/ 10% Duty 3.1 - 3.4 GHz
  • PH3134-55L - Radar Pulsed Power Transistor/ SW/ 300ms Pulse/ 10% Duty 3.1 - 3.4 GHz
  • PH3134-65M - Radar Pulsed Power Transistor/ 65W/ 1OOms Pulse/ 10% Duty 3.1 - 3.4 GHz
  • PH3134-75S - Radar Pulsed Power Transistor/75W 1ms Pulse/10% Duty 3.1-3.4GHz
  • PH3135-20M - Radar Pulsed Power Transistor/ 20W/100ms Pulse/10% Duty 3.1-3.5 GHz
  • PH3135-25S - Radar Pulsed Power Transistor/25W/2ms Pulse/10% Duty 3.1-3.5GHz
  • PH3135-30M - Radar Pulsed Power Transistor/ 3OW/ IOOms Pulse/ 10% Duty 3.1 - 3.5 GHz
  • PH3135-5M - Radar Pulsed Power Transistor/ 5W/ looms Pulse/ 10% Duty 3.1 - 3.5 GHz

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* an AMP company ==5= ,,-= E ---== EF .-----z ,= Radar Pulsed Power Transistor, 11 W, lps Pulse, 10% Duty PH3134-11s 3.1 - 3.4 GHz Features NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation High Efficiency Interdigitated Geometry Diffused Emitter Ballasting Resistors Gold Metalization System Internal Input and Output Impedance Matching Hermetic Metal/Ceramic Package Absolute Maximum Ratings at 25°C I .I00 I / I ;2.54>--- ,250 -.152-.x0 (3.86-25) 75.35>-7 ,130 -7(3.30:~ I I .034'.031 StorageTemperature T STG -65 to +200 “‘2 UNLESS IT-ERWISE NCTEC, TZLESANCES ARE INCES :MJLLIMETERS =.305’ =.
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