Datasheet4U Logo Datasheet4U.com

PH3135-5M - Radar Pulsed Power Transistor/ 5W/ looms Pulse/ 10% Duty 3.1 - 3.5 GHz

Features

  • NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation High Efficiency Interdigitated Geometry Diffused Emitter Ballasting Resistors Gold Metalization System Internal Input and Output Impedance Matching Hermetic‘MetaVCeramic Package Absolute Maximum Ratings at 25°C INEES r.005’ Broadband Test Fixture Impedances F(GHz) 3.10 TEST YXTURE :Ncli TEST ‘IXTUR:.

📥 Download Datasheet

Datasheet preview – PH3135-5M

📁 Similar Datasheet

  • PH3135-5M - Radar Pulsed Power Transistor (MA-COM)
  • PH3135-20M - Radar Pulsed Power Transistor (MA-COM)
  • PH3135-25S - Radar Pulsed Power Transistor (MA-COM)
  • PH3135-65M - Radar Pulsed Power Transistor (MA-COM)
  • PH3135-90S - Radar Pulsed Power Transistor (MA-COM)
  • PH3134-10M - Radar Pulsed Power Transistor (MA-COM)
  • PH3134-11S - Radar Pulsed Power Transistor (MA-COM)
  • PH3134-20L - Radar Pulsed Power Transistor (MA-COM)
  • PH3134-55L - Radar Pulsed Power Transistor (MA-COM)
  • PH3134-65M - Radar Pulsed Power Transistor (MA-COM)
Other Datasheets by Tyco Electronics
  • PH3135-5S - Radar Pulsed Power Transistor/5W/2ms Pulse/ 10% Duty 3.1-3.5 GHz
  • PH3135-20M - Radar Pulsed Power Transistor/ 20W/100ms Pulse/10% Duty 3.1-3.5 GHz
  • PH3135-25S - Radar Pulsed Power Transistor/25W/2ms Pulse/10% Duty 3.1-3.5GHz
  • PH3135-30M - Radar Pulsed Power Transistor/ 3OW/ IOOms Pulse/ 10% Duty 3.1 - 3.5 GHz
  • PH3135-90S - Radar Pulsed Power Transistor/ 90W/2ms Pulse/10%Duty 3.1-3.5GHz
  • PH3134-11S - Radar Pulsed Power Transistor/ 11 W/ lms Pulse/ 10% Duty 3.1 - 3.4 GHz
  • PH3134-30S - Radar Pulsed Power Transistor/ 3OW/ lms Pulse/ 10% Duty 3.1 - 3.4 GHz
  • PH3134-55L - Radar Pulsed Power Transistor/ SW/ 300ms Pulse/ 10% Duty 3.1 - 3.4 GHz

Full PDF Text Transcription

Click to expand full text
=s =--= ‘, == * an == .---- -=r= FF AMP company Radar Pulsed Power Transistor, 5W, loops Pulse, 10% Duty PH31355M 3.1 - 3.5 GHz Features NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation High Efficiency Interdigitated Geometry Diffused Emitter Ballasting Resistors Gold Metalization System Internal Input and Output Impedance Matching Hermetic‘MetaVCeramic Package Absolute Maximum Ratings at 25°C INEES r.005’ Broadband Test Fixture Impedances F(GHz) 3.10 TEST YXTURE :Ncli TEST ‘IXTUR: UUTPLIT z,,(Q) 24 - j4.4 20 - j0.7 17+j3.9 z,,m 24 - j20 rs-jll 15-j3.0 - tIRtUIT CIRCLlIT 3.30 3.50 503 5OC2 -L - Radar Pulsed Power Transistor, SW PH3135-5M v2.00 RF Test Fixture BNC CONNECTOR, POMONA ELECT. 24% PC BOARDS, ROGERS 6010.
Published: |