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Radar Pulsed Power Transistor, 3OW, lps Pulse, 10% Duty PH3134-30s 3.1 - 3.4 GHz
v2.00
Features
l l l l l l l l
NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation High Efficiency Interdigitated Geometry Diffused Emitter Ballasting Resistors Gold Metalization System Internal Input and Output Impedance Matching Hermetic Metal/Ceramic Package
I .iOO (2.54) A A
I 430 :!0.16)
Absolute Maximum Ratings at 25°C
Parameter
1 Collector-Emitter Emitter-Base Voltage
il .I00 (2.54)
I Symbol I
1 V,,, V sac L ( P,,, TJ T ST0 1 I
Rating
66 3.0 3.6 350 200 -65 to +200
( Units
1
A
103 (2.
PH3134-30S Datasheet
