SPM6G250-120D - Three-Phase IGBT BRIDGE

Sensitron

General Description

A 1200 VOLT, 250 AMP, THREE PHASE IGBT BRIDGE (Tj=250C UNLESS OTHERWISE SPECIFIED) SYMBOL MI N TYP MAX UNIT ELECTRICAL CHARACTERISTICS PER IGBT DEVICE PARAMETER IGBT SPECIFICATIONS Collector to Emitter Breakdown Voltage IC = 250 µA, VGE = 0V Continuous Collector Current Pulsed Collector Current,

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SPM6G250-120D three-phase igbt bridge by Sensitron - Datasheet Preview

Datasheet Details

Part number	SPM6G250-120D
Manufacturer	Sensitron
File Size	98.42 KB
Description	Three-Phase IGBT BRIDGE
Datasheet	SPM6G250-120D Datasheet

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SENSITRON SEMICONDUCTOR TECHNICAL DATA DATASHEET 4109, REV ENG- SPM6G250-120D Three-Phase IGBT BRIDGE, With Gate Driver and Optical Isolation DESCRIPTION: A 1200 VOLT, 250 AMP, THREE PHASE IGBT BRIDGE (Tj=250C UNLESS OTHERWISE SPECIFIED) SYMBOL MI N TYP MAX UNIT ELECTRICAL CHARACTERISTICS PER IGBT DEVICE PARAMETER IGBT SPECIFICATIONS Collector to Emitter Breakdown Voltage IC = 250 µA, VGE = 0V Continuous Collector Current Pulsed Collector Current, 1mS Gate to Emitter Voltage Gate-Emitter Leakage Current , VGE = +/-20V www.DataSheet4U.com BVCES TC = 25 OC TC = 90 C ICM VGE IGES V GE(TH) O 1200 - - V IC - - 250 240 A 3.0 - - 600 +/-20 +/- 300 6.