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SPM6G120-120D - Three-Phase IGBT BRIDGE

Description

A 1200 VOLT, 120 AMP, THREE PHASE IGBT BRIDGE ELECTRICAL CHARACTERISTICS PER IGBT DEVICE (Tj=250C UNLESS OTHERWISE SPECIFIED) SYMBOL MIN TYP MAX UNIT PARAMETER IGBT SPECIFICATIONS Collector to Emitter Breakdown Voltage IC = 2mA, VGE = 0V Continuous Collector Current Pulsed Collector Current, 10m

Features

  • Court  Deer Park, NY 11729  (631) 586 7600 FAX (631) 242 9798.
  • World Wide Web Site - http://www. sensitron. com.
  • E-mail Address - sales@sensitron. com.
  • 10.

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Datasheet Details

Part number SPM6G120-120D
Manufacturer Sensitron
File Size 284.95 KB
Description Three-Phase IGBT BRIDGE
Datasheet download datasheet SPM6G120-120D Datasheet

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Full PDF Text Transcription

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SENSITRON SEMICONDUCTOR TECHNICAL DATA SPM6G120-120D Data Sheet 4100 Rev. - Three-Phase IGBT BRIDGE, With Gate Driver and Optical Isolation DESCRIPTION: A 1200 VOLT, 120 AMP, THREE PHASE IGBT BRIDGE ELECTRICAL CHARACTERISTICS PER IGBT DEVICE (Tj=250C UNLESS OTHERWISE SPECIFIED) SYMBOL MIN TYP MAX UNIT PARAMETER IGBT SPECIFICATIONS Collector to Emitter Breakdown Voltage IC = 2mA, VGE = 0V Continuous Collector Current Pulsed Collector Current, 10mS Zero Gate Voltage Collector Current (For the module) VCE = 1200 V, VGE=0V Ti=25oC VCE = 800 V, VGE=0V Ti=125oC www.DataSheet4U.
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