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SENSITRON SEMICONDUCTOR
TECHNICAL DATA
SPM6G140-060D
Data Sheet 4977 Rev. -
Three-Phase IGBT BRIDGE, With Gate Driver and Optical Isolation
DESCRIPTION: A 600 VOLT, 140 AMP, THREE PHASE IGBT BRIDGE
ELECTRICAL CHARACTERISTICS PER IGBT DEVICE
(Tj=250C UNLESS OTHERWISE SPECIFIED) SYMBOL MIN TYP MAX UNIT
PARAMETER
IGBT SPECIFICATIONS
Collector to Emitter Breakdown Voltage IC = 2mA, VGE = 0V Continuous Collector Current Pulsed Collector Current, 10mS Zero Gate Voltage Collector Current (For the module) VCE = 600 V, VGE=0V Ti=25oC VCE = 480 V, VGE=0V Ti=125oC
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