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SPM6G150-060D - Three-Phase IGBT BRIDGE

Description

A 600 VOLT, 150 AMP, THREE PHASE IGBT BRIDGE ELECTRICAL CHARACTERISTICS PER IGBT DEVICE (Tj=250C UNLESS OTHERWISE SPECIFIED) SYMBOL MI N TYP MAX UNIT PARAMETER IGBT SPECIFICATIONS Collector to Emitter Breakdown Voltage IC = 250 µA, VGE = 0V Continuous Collector Current Pulsed Collector Current,

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Datasheet Details

Part number SPM6G150-060D
Manufacturer Sensitron
File Size 92.31 KB
Description Three-Phase IGBT BRIDGE
Datasheet download datasheet SPM6G150-060D Datasheet

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SENSITRON SEMICONDUCTOR TECHNICAL DATA DATASHEET 4113, REV A SPM6G150-060D Three-Phase IGBT BRIDGE, With Gate Driver and Optical Isolation DESCRIPTION: A 600 VOLT, 150 AMP, THREE PHASE IGBT BRIDGE ELECTRICAL CHARACTERISTICS PER IGBT DEVICE (Tj=250C UNLESS OTHERWISE SPECIFIED) SYMBOL MI N TYP MAX UNIT PARAMETER IGBT SPECIFICATIONS Collector to Emitter Breakdown Voltage IC = 250 µA, VGE = 0V Continuous Collector Current Pulsed Collector Current, 1mS Gate to Emitter Voltage Gate-Emitter Leakage Current , VGE = +/-20V Zero Gate Voltage Collector Current www.DataSheet4U.
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