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SPM6G060-120D - Three-Phase IGBT BRIDGE

Description

A 1200 VOLT, 60 AMP, THREE PHASE IGBT BRIDGE ELECTRICAL CHARACTERISTICS PER IGBT DEVICE (Tj=250C UNLESS OTHERWISE SPECIFIED) SYMBOL MIN TYP MAX UNIT PARAMETER IGBT SPECIFICATIONS Collector to Emitter Breakdown Voltage IC = 500 µA, VGE = 0V Continuous Collector Current TC = 25 OC O BVCES IC ICM

Features

  • 4- Under-voltage shutdown is automatically reset once the VCC rises above the 12.1V threshold limit. 5- Desaturation shutdown is a latching feature and internally reset. 6- When any of the internal protection features is activated, SD is pulled down. 7- SD can be used to shutdown all IGBTs by an external command. An open collector switch shall be used to pull down SD externally. 8- Also, SD can be used as a fault condition output. Low output at SD indicates a fault situation. b- Fault Output Fe.

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Datasheet Details

Part number SPM6G060-120D
Manufacturer Sensitron
File Size 92.00 KB
Description Three-Phase IGBT BRIDGE
Datasheet download datasheet SPM6G060-120D Datasheet

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Full PDF Text Transcription

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SENSITRON SEMICONDUCTOR TECHNICAL DATA Datasheet 4165, Rev. B SPM6G060-120D Three-Phase IGBT BRIDGE, With Gate Driver and Optical Isolation DESCRIPTION: A 1200 VOLT, 60 AMP, THREE PHASE IGBT BRIDGE ELECTRICAL CHARACTERISTICS PER IGBT DEVICE (Tj=250C UNLESS OTHERWISE SPECIFIED) SYMBOL MIN TYP MAX UNIT PARAMETER IGBT SPECIFICATIONS Collector to Emitter Breakdown Voltage IC = 500 µA, VGE = 0V Continuous Collector Current TC = 25 OC O BVCES IC ICM VGE IGES ICES 1200 - - 60 40 100 +/-20 +/- 200 V A A V nA TC = 90 C Pulsed Collector Current, Pulse Width limited by TjMax Gate to Emitter Voltage Gate-Emitter Leakage Current , VGE = +/-20V Zero Gate Voltage Collector Current www.DataSheet4U.
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