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SPM6G080-120D - Three-Phase IGBT BRIDGE

Description

A 1200 VOLT, 80 AMP, THREE PHASE IGBT BRIDGE (Tj=250C UNLESS OTHERWISE SPECIFIED) SYMBOL MI N TYP MAX UNIT ELECTRICAL CHARACTERISTICS PER IGBT DEVICE PARAMETER IGBT SPECIFICATIONS Collector to Emitter Breakdown Voltage IC = 250 µA, VGE = 0V Continuous Collector Current Pulsed Collector Current,

Features

  • 4- Under-voltage shutdown is automatically reset after 300 msec once the VCC rises above the threshold limit. 5- Desaturation shutdown is a latching feature and internally reset after 300 msec. 6- When any of the internal protection features is activated, SD is pulled down. 7- SD can be used to shutdown all IGBTs except the brake IGBT by an external command. An open collector switch shall be used to pull down SD externally. 8- Also, SD can be used as a fault condition output. Low output at SD i.

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Datasheet Details

Part number SPM6G080-120D
Manufacturer Sensitron
File Size 108.01 KB
Description Three-Phase IGBT BRIDGE
Datasheet download datasheet SPM6G080-120D Datasheet

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Full PDF Text Transcription

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SENSITRON SEMICONDUCTOR TECHNICAL DATA DATASHEET 4099, REV D SPM6G080-120D Three-Phase IGBT BRIDGE, With Gate Driver and Optical Isolation DESCRIPTION: A 1200 VOLT, 80 AMP, THREE PHASE IGBT BRIDGE (Tj=250C UNLESS OTHERWISE SPECIFIED) SYMBOL MI N TYP MAX UNIT ELECTRICAL CHARACTERISTICS PER IGBT DEVICE PARAMETER IGBT SPECIFICATIONS Collector to Emitter Breakdown Voltage IC = 250 µA, VGE = 0V Continuous Collector Current Pulsed Collector Current, 1mS Gate to Emitter Voltage Gate-Emitter Leakage Current , VGE = +/-20V www.DataSheet4U.com BVCES TC = 25 OC TC = 90 C ICM VGE IGES V GE(TH) O 1200 - - V IC - - 80 70 A 3.0 - - 200 +/-20 +/- 100 6.
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