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HFP4N60F - 600V N-Channel MOSFET

Features

  • ‰ Originative New Design ‰ Superior Avalanche Rugged Technology ‰ Robust Gate Oxide Technology ‰ Very Low Intrinsic Capacitances ‰ Excellent Switching Characteristics ‰ Unrivalled Gate Charge : 8.5 nC (Typ. ) ‰ Extended Safe Operating Area ‰ Lower RDS(ON) : 2.6 ȍ 7S #9GS=10V ‰ 100% Avalanche Tested BVDSS = 600 V RDS(on) typ ȍ ID = 4 A TO-220 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR EAR.

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Datasheet Details

Part number HFP4N60F
Manufacturer SemiHow
File Size 197.10 KB
Description 600V N-Channel MOSFET
Datasheet download datasheet HFP4N60F Datasheet

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Full PDF Text Transcription

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HFP4N60F July 2015 HFP4N60F 600V N-Channel MOSFET FEATURES ‰ Originative New Design ‰ Superior Avalanche Rugged Technology ‰ Robust Gate Oxide Technology ‰ Very Low Intrinsic Capacitances ‰ Excellent Switching Characteristics ‰ Unrivalled Gate Charge : 8.5 nC (Typ.) ‰ Extended Safe Operating Area ‰ Lower RDS(ON) : 2.6 ȍ 7S #9GS=10V ‰ 100% Avalanche Tested BVDSS = 600 V RDS(on) typ ȍ ID = 4 A TO-220 1 2 3 1.Gate 2. Drain 3.
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