Datasheet4U Logo Datasheet4U.com

HFP10N60 - N-Channel MOSFET

Features

  • ‰ Originative New Design ‰ Superior Avalanche Rugged Technology ‰ Robust Gate Oxide Technology ‰ Very Low Intrinsic Capacitances ‰ Excellent Switching Characteristics ‰ Unrivalled Gate Charge : 15 nC (Typ. ) ‰ Extended Safe Operating Area ‰ Lower RDS(ON) : 0.64 Ω (Typ. ) @VGS=10V Nov 2005 BVDSS = 600 V RDS(on) typ = 0.64 Ω ID = 9.5 A TO-220 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR EAR dv/dt Drai.

📥 Download Datasheet

Datasheet Details

Part number HFP10N60
Manufacturer SemiHow
File Size 506.02 KB
Description N-Channel MOSFET
Datasheet download datasheet HFP10N60 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
HFP13N10 N-Channel Enhancement Mode Field Effect Transistor HUASHAN ELECTRONIC
HFP13N50 N-Channel Enhancement Mode Field Effect Transistor HUASHAN ELECTRONIC
HFP15N06 N-Channel Enhancement Mode Field Effect Transistor HUASHAN ELECTRONIC
HFP17N10 N-Channel Enhancement Mode Field Effect Transistor HUASHAN ELECTRONIC
HFP4N65 N-Channel Enhancement Mode Field Effect Transistor HUASHAN ELECTRONIC

Other Datasheets by SemiHow

Part Number Description
HFP10N60S N-Channel MOSFET
HFP10N60U N-Channel MOSFET
HFP10N65S N-Channel MOSFET
HFP10N65U N-Channel MOSFET
HFP10N80 N-Channel MOSFET

Full PDF Text Transcription

Click to expand full text
HFP10N60 HFP10N60 600V N-Channel MOSFET FEATURES ‰ Originative New Design ‰ Superior Avalanche Rugged Technology ‰ Robust Gate Oxide Technology ‰ Very Low Intrinsic Capacitances ‰ Excellent Switching Characteristics ‰ Unrivalled Gate Charge : 15 nC (Typ.) ‰ Extended Safe Operating Area ‰ Lower RDS(ON) : 0.64 Ω (Typ.) @VGS=10V Nov 2005 BVDSS = 600 V RDS(on) typ = 0.64 Ω ID = 9.5 A TO-220 1 2 3 1.Gate 2. Drain 3.
Published: |