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HFP10N65S - N-Channel MOSFET

Features

  • Originative New Design.
  • Superior Avalanche Rugged Technology.
  • Robust Gate Oxide Technology.
  • Very Low Intrinsic Capacitances.
  • Excellent Switching Characteristics.
  • Unrivalled Gate Charge : 29 nC (Typ. ).
  • Extended Safe Operating Area.
  • Lower RDS(ON) ȍ 7S #9GS=10V.
  • 100% Avalanche Tested TO-220 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR EAR dv/dt.

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Datasheet Details

Part number HFP10N65S
Manufacturer SemiHow
File Size 176.34 KB
Description N-Channel MOSFET
Datasheet download datasheet HFP10N65S Datasheet

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Full PDF Text Transcription

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HFP10N65S March 2014 HFP10N65S 650V N-Channel MOSFET BVDSS = 650 V RDS(on) typ ȍ ID = 9.5 A FEATURES ƒ Originative New Design ƒ Superior Avalanche Rugged Technology ƒ Robust Gate Oxide Technology ƒ Very Low Intrinsic Capacitances ƒ Excellent Switching Characteristics ƒ Unrivalled Gate Charge : 29 nC (Typ.) ƒ Extended Safe Operating Area ƒ Lower RDS(ON) ȍ 7S #9GS=10V ƒ 100% Avalanche Tested TO-220 1 2 3 1.Gate 2. Drain 3.
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