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HFP17N10 - N-Channel Enhancement Mode Field Effect Transistor

Description

These are N-Channel enhancement mode silicon gate power field effect transistors.

Features

  • s.
  • 17A, 100V, RDS(on).

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Datasheet Details

Part number HFP17N10
Manufacturer HUASHAN ELECTRONIC
File Size 1.15 MB
Description N-Channel Enhancement Mode Field Effect Transistor
Datasheet download datasheet HFP17N10 Datasheet

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Full PDF Text Transcription

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Shantou Huashan Electronic Devices Co.,Ltd. HFP17N10 N-Channel Enhancement Mode Field Effect Transistor █ General Description These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, this advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode . These devices are well suited for low voltage applications such as audio amplifier, high efficiency switching DC/DC converters, and DC motor control.
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