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HFP10N65U - N-Channel MOSFET

Features

  • ‰ Originative New Design ‰ Superior Avalanche Rugged Technology ‰ Robust Gate Oxide Technology ‰ Very Low Intrinsic Capacitances ‰ Excellent Switching Characteristics ‰ Unrivalled Gate Charge : 29 nC (Typ. ) ‰ Extended Safe Operating Area ‰ Lower RDS(ON) : 0.8 ȍ 7S #9GS=10V ‰ 100% Avalanche Tested March 2013 BVDSS = 650 V RDS(on) typ = 0.8 ȍ ID = 9.5 A TO-220 1 23 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS E.

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Datasheet Details

Part number HFP10N65U
Manufacturer SemiHow
File Size 202.25 KB
Description N-Channel MOSFET
Datasheet download datasheet HFP10N65U Datasheet

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Full PDF Text Transcription

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HFP10N65U HFP10N65U 650V N-Channel MOSFET FEATURES ‰ Originative New Design ‰ Superior Avalanche Rugged Technology ‰ Robust Gate Oxide Technology ‰ Very Low Intrinsic Capacitances ‰ Excellent Switching Characteristics ‰ Unrivalled Gate Charge : 29 nC (Typ.) ‰ Extended Safe Operating Area ‰ Lower RDS(ON) : 0.8 ȍ 7S #9GS=10V ‰ 100% Avalanche Tested March 2013 BVDSS = 650 V RDS(on) typ = 0.8 ȍ ID = 9.5 A TO-220 1 23 1.Gate 2. Drain 3.
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