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HFP10N60S - N-Channel MOSFET

Features

  • q Originative New Design q Superior Avalanche Rugged Technology q Robust Gate Oxide Technology q Very Low Intrinsic Capacitances q Excellent Switching Characteristics q Unrivalled Gate Charge : 29 nC (Typ. ) q Extended Safe Operating Area q Lower RDS(ON) : 0.67 Ω (Typ. ) @VGS=10V q 100% Avalanche Tested TO-220 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR EAR dv/dt Drain-Source Voltage Drain Current.

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Datasheet Details

Part number HFP10N60S
Manufacturer SemiHow
File Size 834.08 KB
Description N-Channel MOSFET
Datasheet download datasheet HFP10N60S Datasheet

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Full PDF Text Transcription

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HFP10N60S Nov 2007 HFP10N60S 600V N-Channel MOSFET BVDSS = 600 V RDS(on) typ = 0.67 Ω ID = 9.5 A FEATURES q Originative New Design q Superior Avalanche Rugged Technology q Robust Gate Oxide Technology q Very Low Intrinsic Capacitances q Excellent Switching Characteristics q Unrivalled Gate Charge : 29 nC (Typ.) q Extended Safe Operating Area q Lower RDS(ON) : 0.67 Ω (Typ.) @VGS=10V q 100% Avalanche Tested TO-220 1 2 3 1.Gate 2. Drain 3.
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