Datasheet4U Logo Datasheet4U.com

HCS12NK65V - N-Channel MOSFET

Datasheet Summary

Features

  • ‰ Originative New Design ‰ Superior Avalanche Rugged Technology ‰ Robust Gate Oxide Technology ‰ Very Low Intrinsic Capacitances ‰ Excellent Switching Characteristics ‰ Unrivalled Gate Charge : 32 nC (Typ. ) ‰ Extended Safe Operating Area ‰ Lower RDS(ON) : ȍ(Typ. ) @VGS=10V ‰ 100% Avalanche Tested ‰ RoHS Compliant TO-220F 12 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR EAR dv/dt Drain-Source Volta.

📥 Download Datasheet

Datasheet preview – HCS12NK65V

Datasheet Details

Part number HCS12NK65V
Manufacturer SemiHow
File Size 418.47 KB
Description N-Channel MOSFET
Datasheet download datasheet HCS12NK65V Datasheet
Additional preview pages of the HCS12NK65V datasheet.
Other Datasheets by SemiHow

Full PDF Text Transcription

Click to expand full text
HCS12NK65V Apr 2014 HCS12NK65V 650V N-Channel Super Junction MOSFET BVDSS = 650 V RDS(on) typ = 0.34 ȍ ID = 12 A FEATURES ‰ Originative New Design ‰ Superior Avalanche Rugged Technology ‰ Robust Gate Oxide Technology ‰ Very Low Intrinsic Capacitances ‰ Excellent Switching Characteristics ‰ Unrivalled Gate Charge : 32 nC (Typ.) ‰ Extended Safe Operating Area ‰ Lower RDS(ON) : ȍ(Typ.) @VGS=10V ‰ 100% Avalanche Tested ‰ RoHS Compliant TO-220F 12 3 1.Gate 2. Drain 3.
Published: |