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HCS50R150V - 500V N-Channel Super Junction MOSFET

Datasheet Summary

Features

  • ‰ Originative New Design ‰ Superior Avalanche Rugged Technology ‰ Robust Gate Oxide Technology ‰ Very Low Intrinsic Capacitances ‰ Excellent Switching Characteristics ‰ Unrivalled Gate Charge : 54 nC (Typ. ) ‰ Extended Safe Operating Area ‰ Lower RDS(ON) : 0.15 ȍ(Typ. ) @VGS=10V ‰ 100% Avalanche Tested ‰ RoHS Compliant TO-220F 12 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR EAR dv/dt Drain-Source Volta.

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Datasheet Details

Part number HCS50R150V
Manufacturer SemiHow
File Size 306.00 KB
Description 500V N-Channel Super Junction MOSFET
Datasheet download datasheet HCS50R150V Datasheet
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HCS50R150V July 2014 HCS50R150V 500V N-Channel Super Junction MOSFET BVDSS = 500 V RDS(on) typ = 0.13 ȍ ID = 22 A FEATURES ‰ Originative New Design ‰ Superior Avalanche Rugged Technology ‰ Robust Gate Oxide Technology ‰ Very Low Intrinsic Capacitances ‰ Excellent Switching Characteristics ‰ Unrivalled Gate Charge : 54 nC (Typ.) ‰ Extended Safe Operating Area ‰ Lower RDS(ON) : 0.15 ȍ(Typ.) @VGS=10V ‰ 100% Avalanche Tested ‰ RoHS Compliant TO-220F 12 3 1.Gate 2. Drain 3.
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