Datasheet4U Logo Datasheet4U.com

HCS55R140E - N-Channel MOSFET

Datasheet Summary

Features

  • ‰ Very Low FOM (RDS(on) X Qg) ‰ Extremely low switching loss ‰ Excellent stability and uniformity ‰ 100% Avalanche Tested Key Parameters Parameter BVDSS @Tj,max ID RDS(on), max Qg, Typ Value 600 23 0.14 22 Unit V A ȍ nC.

📥 Download Datasheet

Datasheet preview – HCS55R140E

Datasheet Details

Part number HCS55R140E
Manufacturer SemiHow
File Size 239.55 KB
Description N-Channel MOSFET
Datasheet download datasheet HCS55R140E Datasheet
Additional preview pages of the HCS55R140E datasheet.

📁 Similar Datasheet

  • HCS500 - KEELOQ CODE HOPPING ENCODER (Microchip Technology)
  • HCS512 - KEELOQ CODE HOPPING DECODER (Microchip Technology)
  • HCS515 - KEELOQ CODE HOPPING DECODER (Microchip Technology)
  • HCS573MS - Radiation Hardened Octal Transparent Latch (Intersil Corporation)
  • HCS5931 - METAL STRIP CURRENT SENSING RESISTORS (HITANO)
  • HCS00MS - Radiation Hardened Quad 2-Input NAND Gate (Intersil Corporation)
  • HCS02MS - Radiation Hardened Quad 2-Input NOR Gate (Intersil Corporation)
  • HCS04MS - Radiation Hardened Hex Inverter (Intersil Corporation)
  • HCS05MS - Radiation Hardened Hex Inverter with Open Drain (Intersil Corporation)
  • HCS08 - Microcontrollers (Freescale Semiconductor)
Other Datasheets by SemiHow

Full PDF Text Transcription

Click to expand full text
HCS55R140E Super Junction MOSFET April 2016 HCS55R140E 550V N-Channel Super Junction MOSFET Features ‰ Very Low FOM (RDS(on) X Qg) ‰ Extremely low switching loss ‰ Excellent stability and uniformity ‰ 100% Avalanche Tested Key Parameters Parameter BVDSS @Tj,max ID RDS(on), max Qg, Typ Value 600 23 0.
Published: |