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HCS60R092E Super Junction MOSFET
July 2016
HCS60R092E
600V N-Channel Super Junction MOSFET
Features
Very Low FOM (RDS(on) X Qg) Extremely low switching loss Excellent stability and uniformity 100% Avalanche Tested
Key Parameters
Parameter BVDSS @Tj,max
ID RDS(on), max
Qg, Typ
Value 650 40 92 45
Unit V A Pȍ nC
Application
PC Power Server Power Supply Telecom Solar Inverter Super Charger for Automobiles
Package & Internal Circuit
TO-220F
G D S
Absolute Maximum Ratings TC=25 unless otherwise specified
Symbol
Parameter
Value
VDSS VGS
ID
IDM EAS dv/dt dv/dt PD TJ, TSTG
TL
Drain-Source Voltage
Gate-Source Voltage
Drain Current Drain Current Drain Current
– Continuous (TC = 25)
– Continuous (TC = 100)
– Pulsed
(Note 1)
Single Pulsed Avalanche Energy
(Not
HCS60R092E Datasheet
