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HCS60R180E - 600V N-Channel Super Junction MOSFET

Datasheet Summary

Features

  • ‰ Very Low FOM (RDS(on) X Qg) ‰ Extremely low switching loss ‰ Excellent stability and uniformity ‰ 100% Avalanche Tested Key Parameters Parameter BVDSS @Tj,max ID RDS(on), max Qg, Typ Value 650 20 0.18 22 Unit V A ȍ nC.

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Datasheet Details

Part number HCS60R180E
Manufacturer SemiHow
File Size 218.09 KB
Description 600V N-Channel Super Junction MOSFET
Datasheet download datasheet HCS60R180E Datasheet
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HCS60R180E Super Junction MOSFET Mar 2016 HCS60R180E 600V N-Channel Super Junction MOSFET Features ‰ Very Low FOM (RDS(on) X Qg) ‰ Extremely low switching loss ‰ Excellent stability and uniformity ‰ 100% Avalanche Tested Key Parameters Parameter BVDSS @Tj,max ID RDS(on), max Qg, Typ Value 650 20 0.
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