Datasheet4U Logo Datasheet4U.com

HCS60R190FS - 600V N-Channel Super Junction MOSFET

Datasheet Summary

Features

  • Very Low FOM (RDS(on) X Qg).
  • Extremely low switching loss.
  • Excellent stability and uniformity.
  • 100% Avalanche Tested.
  • Built-in ESD Diode Key Parameters Parameter BVDSS @Tj,max ID RDS(on), max Qg, Typ Value 650 17.6 0.19 40 Unit V A Ω nC.

📥 Download Datasheet

Datasheet preview – HCS60R190FS

Datasheet Details

Part number HCS60R190FS
Manufacturer SemiHow
File Size 290.34 KB
Description 600V N-Channel Super Junction MOSFET
Datasheet download datasheet HCS60R190FS Datasheet
Additional preview pages of the HCS60R190FS datasheet.

📁 Similar Datasheet

  • HCS00MS - Radiation Hardened Quad 2-Input NAND Gate (Intersil Corporation)
  • HCS02MS - Radiation Hardened Quad 2-Input NOR Gate (Intersil Corporation)
  • HCS04MS - Radiation Hardened Hex Inverter (Intersil Corporation)
  • HCS05MS - Radiation Hardened Hex Inverter with Open Drain (Intersil Corporation)
  • HCS08 - Microcontrollers (Freescale Semiconductor)
  • HCS0805 - METAL STRIP CURRENT SENSING RESISTORS (HITANO)
  • HCS08MS - Radiation Hardened Quad 2-Input AND Gate (Intersil Corporation)
  • HCS101 - Fixed Code Encoder (Microchip)
  • HCS109MS - Radiation Hardened Dual JK Flip Flop (Intersil)
  • HCS10MS - Radiation Hardened Triple 3-Input NAND Gate (Intersil)
Other Datasheets by SemiHow

Full PDF Text Transcription

Click to expand full text
HCS60R190FS Dec 2021 HCS60R190FS 600V N-Channel Super Junction MOSFET Features • Very Low FOM (RDS(on) X Qg) • Extremely low switching loss • Excellent stability and uniformity • 100% Avalanche Tested • Built-in ESD Diode Key Parameters Parameter BVDSS @Tj,max ID RDS(on), max Qg, Typ Value 650 17.6 0.
Published: |