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HCS60R150T - 600V N-Channel Super Junction MOSFET

Datasheet Summary

Features

  • ‰ Very Low FOM (RDS(on) X Qg) ‰ Extremely low switching loss ‰ Excellent stability and uniformity ‰ 100% Avalanche Tested Key Parameters Parameter BVDSS @Tj,max ID RDS(on), max Qg, Typ Value 650 22 0.15 41 Unit V A ȍ nC.

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Datasheet Details

Part number HCS60R150T
Manufacturer SemiHow
File Size 259.57 KB
Description 600V N-Channel Super Junction MOSFET
Datasheet download datasheet HCS60R150T Datasheet
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HCS60R150T Super Junction MOSFET Jan 2016 HCS60R150T 600V N-Channel Super Junction MOSFET Features ‰ Very Low FOM (RDS(on) X Qg) ‰ Extremely low switching loss ‰ Excellent stability and uniformity ‰ 100% Avalanche Tested Key Parameters Parameter BVDSS @Tj,max ID RDS(on), max Qg, Typ Value 650 22 0.
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