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FTS2015 - Ultrahigh-Speed Switching Applications

Key Features

  • Package Dimensions unit : mm 2147A [FTS2015] 0.65 Low ON-resistance. 2.5V drive. Mount height 1.1mm. 8 5 0.5 4.5 6.4 0.95 3.0 0.425 1 0.25 4 0.95 0.125 1 : Drain 2 : Source 3 : Source 4 : Gate 5 : Drain 6 : Source 7 : Source 8 : Drain SANYO : TSSOP8 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Tem.

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Full PDF Text Transcription for FTS2015 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for FTS2015. For precise diagrams, tables, and layout, please refer to the original PDF.

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Ordering number : ENN6667 FTS2015 N-Channel Silicon MOSFET FTS2015 Ultrahigh-Speed Switching Applications Features • • • Package Dimensions unit : mm 2147A [FTS2015] 0.65 Low ON-resistance. 2.5V drive. Mount height 1.1mm. 8 5 0.5 4.5 6.4 0.95 3.0 0.425 1 0.25 4 0.95 0.125 1 : Drain 2 : Source 3 : Source 4 : Gate 5 : Drain 6 : Source 7 : Source 8 : Drain SANYO : TSSOP8 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Mounted on a ceramic board (1000mm !0.8mm) 2 Conditions 0.1 1.0 Ratings 30 ± 10 7 28 1.