Full PDF Text Transcription for FTS2011 (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
FTS2011 . For precise diagrams, and layout, please refer to the original PDF.
Ordering number:ENN6355 N-Channel Silicon MOSFET FTS2011 Load Switching Applications Features · Low ON resistance. · 2.5V drive. · Mounting height 1.1mm. Package Dimensio...
View more extracted text
ON resistance. · 2.5V drive. · Mounting height 1.1mm. Package Dimensions unit:mm 2147A [FTS2011] 0.65 8 5 0.5 0.95 3.0 0.425 1 4 0.25 (0.95) Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% 1 : Drain 2 : Source 3 : Source 4 : Gate 5 : Drain 6 : Source 0.125 7 : Source 8 : Drain SANYO : TSSOP8 4.5 Conditions 6.4 Ratings 20 ±10 8 32 1.3 150 –55 to +150 Unit V V A A W ˚C ˚C Mounted on a ceramic board
More Datasheets from SANYO (now Panasonic)
Part Number
Description
FTS2012
Ultrahigh-Speed Switching Applications
FTS2015
Ultrahigh-Speed Switching Applications
FTS2001
DC-DC Converter Applications
FTS2002
DC-DC Converter Applications
FTS2003
DC/DC Converter Applications
FTS2004
Ultrahigh-Speed Switching Applications
FTS2005
Liquid Crystal Display Backlight Drive Applications
FTS2051
N-Channel Silicon MOSFET
FTS2057
N-Channel Silicon MOSFET
FTS1001
Ultrahigh-Speed Switching Applications
FTS2011 Datasheet
