Mount height 1.1mm. Package Dimensions
unit:mm 2147
3.0 0.975 0.65
[FTS2002]
0.95
8
5
0.5
1
4
0.25
0.125
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Conditions
0.1
1.0 1.2max
1:Drain 2:Source 3:Source 4:Gate.
Full PDF Text Transcription for FTS2002 (Reference)
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FTS2002. For precise diagrams, and layout, please refer to the original PDF.
www.DataSheet4U.com Ordering number:EN5906 N-Channel Silicon MOSFET FTS2002 DC-DC Converter Applications Features · Low ON resistance. · 4V dirve. · Mount height 1.1mm. P...
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ions Features · Low ON resistance. · 4V dirve. · Mount height 1.1mm. Package Dimensions unit:mm 2147 3.0 0.975 0.65 [FTS2002] 0.95 8 5 0.5 1 4 0.25 0.125 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Conditions 0.1 1.0 1.2max 1:Drain 2:Source 3:Source 4:Gate 5:Drain 6:Source 7:Source 8:Drain SANYO:TSSOP8 4.5 0.95 6.4 Ratings 30 ±20 5 30 1.5 150 –55 to +150 Unit V V A A W ˚C ˚C Mounted on a ceram
FTS2002 Datasheet
