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FTS2004 - Ultrahigh-Speed Switching Applications

Key Features

  • Low ON resistance.
  • 4V drive.
  • Mounting height 1.1mm. Package Dimensions unit:mm 2147A [FTS2004] 0.65 8 5 0.5 0.95 3.0 0.425 1 4 0.25 (0.95) 1 : Drain 2 : Source 3 : Source 4 : Gate 5 : Drain 6 : Source 7 : Source 0.125 8 : Drain SANYO : TSSOP8 4.5 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol V.

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Full PDF Text Transcription for FTS2004 (Reference)

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Ordering number:ENN5949A N-Channel Silicon MOSFET FTS2004 Ultrahigh-Speed Switching Applications Features · Low ON resistance. · 4V drive. · Mounting height 1.1mm. Packag...

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tures · Low ON resistance. · 4V drive. · Mounting height 1.1mm. Package Dimensions unit:mm 2147A [FTS2004] 0.65 8 5 0.5 0.95 3.0 0.425 1 4 0.25 (0.95) 1 : Drain 2 : Source 3 : Source 4 : Gate 5 : Drain 6 : Source 7 : Source 0.125 8 : Drain SANYO : TSSOP8 4.5 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Conditions 6.4 Ratings 30 ±20 4 25 1.3 150 –55 to +150 Unit V V A A W ˚C ˚C Mounted on a cera