Full PDF Text Transcription for FTS1001 (Reference)
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Ordering number:ENN6093A P-Channel Silicon MOSFET FTS1001 Ultrahigh-Speed Switching Applications Features · Low ON resistance. · 2.5V drive. · Mounting height 1.1mm. Pack...
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tures · Low ON resistance. · 2.5V drive. · Mounting height 1.1mm. Package Dimensions unit:mm 2147A [FTS1001] 0.65 8 5 0.5 0.95 3.0 0.425 1 4 0.25 (0.95) 1 : Drain 2 : Source 3 : Source 4 : Gate 5 : Drain 6 : Source 7 : Source 0.125 8 : Drain SANYO : TSSOP8 4.5 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Conditions 6.4 Ratings –20 ±10 –4 –20 1.5 150 –55 to +150 Unit V V A A W ˚C ˚C Mounted on a
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FTS1001 Datasheet
