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FTS2012 - Ultrahigh-Speed Switching Applications

Key Features

  • Low ON resistance.
  • 4V drive.
  • Mounting height 1.1mm. Package Dimensions unit:mm 2147A [FTS2012] 0.65 8 5 0.5 0.95 3.0 0.425 1 4 0.25 (0.95) Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% 1 : Drain 2 : Source 3 : Source 4 : Gate 5 : Drain 6 : Sou.

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Full PDF Text Transcription for FTS2012 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for FTS2012. For precise diagrams, tables, and layout, please refer to the original PDF.

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Ordering number:ENN6360 N-Channel Silicon MOSFET FTS2012 Ultrahigh-Speed Switching Applications Features · Low ON resistance. · 4V drive. · Mounting height 1.1mm. Package Dimensions unit:mm 2147A [FTS2012] 0.65 8 5 0.5 0.95 3.0 0.425 1 4 0.25 (0.95) Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% 1 : Drain 2 : Source 3 : Source 4 : Gate 5 : Drain 6 : Source 0.125 7 : Source 8 : Drain SANYO : TSSOP8 4.5 Conditions 6.4 Ratings 30 ±20 8 32 1.3 150 –55 to +150 Unit V V A A W ˚C ˚C Mounted on a ceramic board (1000mm2×0.