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K6F8016V3A - 512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM

General Description

The K6F8016V3A families are fabricated by SAMSUNG′s advanced full CMOS process technology.

The families support various operating temperature ranges.

The families also support low data retention voltage for battery back-up operation with low data retention current.

Key Features

  • Process Technology: Full CMOS.
  • Organization: 512K x16.
  • Power Supply Voltage: 3.0~3.6V.
  • Low Data Retention Voltage: 1.5V(Min).
  • Three State Outputs.
  • Package Type: 44-TSOP2-400F/R CMOS SRAM www. DataSheet4U. com.

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Full PDF Text Transcription for K6F8016V3A (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for K6F8016V3A. For precise diagrams, and layout, please refer to the original PDF.

K6F8016V3A Family Document Title CMOS SRAM www.DataSheet4U.com 512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM Revision History Revision No. History 0.0...

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Voltage Full CMOS Static RAM Revision History Revision No. History 0.0 Initial draft -Design Target Finalize Draft Date July 4, 2001 Remark Preliminary 1.0 September 26, 2001 Final The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices. 1 Revision 1.0 September 2001 K6F8016V3A Family FEATURES • Process Technology: Full CMOS • Organization: 512K x16 • Power Supply Voltage: 3.0~3.6V • Low Data Reten

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