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K6F1616R6A - CMOS SRAM

General Description

The K6F1616R6A families are fabricated by SAMSUNG′s advanced full CMOS process technology.

Key Features

  • Process Technology: Full CMOS.
  • Organization: 1M x16.
  • Power Supply Voltage: 1.65~2.2V.
  • Low Data Retention Voltage: 1.0V(Min).
  • Three State Outputs.
  • Package Type: 48-TBGA-7.50x9.50.

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Full PDF Text Transcription for K6F1616R6A (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for K6F1616R6A. For precise diagrams, and layout, please refer to the original PDF.

K6F1616R6A Family Preliminary CMOS SRAM Document Title 1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM Revision History Revision No. History 0.0 Initial d...

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ll CMOS Static RAM Revision History Revision No. History 0.0 Initial draft Draft Date Remark September 12, 2001 Preliminary The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices. 1 Revision 0.0 September 2001 K6F1616R6A Family Preliminary CMOS SRAM 1M x 16 bit Super Low Power and Low Voltage Full CMOS Static RAM FEATURES • Process Technology: Full CMOS • Organization: 1M x16 • Power Supply Voltag

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K6F1616R6C 1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
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K6F1616T6B-EF55 1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
K6F1616T6B-EF70 1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
K6F1616T6B-F 1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
K6F1616T6B-TF55 1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
K6F1616T6B-TF70 1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
K6F1616U6A 1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
K6F1616U6C 16Mb(1M x 16 bit) Low Power SRAM
K6F1616U6M 1M x 16 bit Super Low Power and Low Voltage Full CMOS Static RAM