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K6F1616R6C - 1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM

General Description

The K6F1616R6C families are fabricated by SAMSUNG′s advanced full CMOS process technology.

The families support industrial operating temperature ranges and have chip scale package for user flexibility of system design.

Key Features

  • Process Technology: Full CMOS.
  • Organization: 1M x16.
  • Power Supply Voltage: 1.65~1.95V.
  • Low Data Retention Voltage: 1.0V(Min).
  • Three State Outputs.
  • Package Type: 48-FBGA-6.00 x 7.00 CMOS SRAM www. DataSheet4U. com.

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Full PDF Text Transcription for K6F1616R6C (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for K6F1616R6C. For precise diagrams, and layout, please refer to the original PDF.

K6F1616R6C Family Document Title 1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM CMOS SRAM www.DataSheet4U.com Revision History Revision No. History 0.0 0...

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S SRAM www.DataSheet4U.com Revision History Revision No. History 0.0 0.1 Initial draft Revised - Changed ball name of E3 (Vss) & H6 (DNU) to NC. - Deleted 85ns Speed bin. Finalize - Deleted 55ns Speed bin. Draft Date November 17, 2003 November 21, 2003 Remark Preliminary Preliminary 1.0 May 24, 2004 Final The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices. 1 Revision 1.

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