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K6F8016R6B - 512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM

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Samsung semiconductor

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K6F8016R6B 512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM by Samsung semiconductor - Datasheet Preview — Datasheet preview – K6F8016R6B

Datasheet Details

Part number	K6F8016R6B
Manufacturer	Samsung semiconductor
File Size	141.55 KB
Description	512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
Datasheet	K6F8016R6B Datasheet
Additional preview pages of the K6F8016R6B datasheet.

Product details

Description

The K6F8016R6B families are fabricated by SAMSUNG′s advanced full CMOS process technology.

Features

Process Technology: Full CMOS.
Organization: 512K x16.
Power Supply Voltage: 1.65~2.2V.
Low Data Retention Voltage: 1.0V(Min).
Three State Outputs.
Package Type: 48-TBGA-6.00x7.00 CMOS SRAM www. DataSheet4U. com.

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Published: Apr 23, 2010 |