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K6F8016U6D - 512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM

General Description

The K6F8016U6D families are fabricated by SAMSUNG′s advanced full CMOS process technology.

The families support industrial operating temperature ranges and have chip scale package for user flexibility of system design.

Key Features

  • Process Technology: Full CMOS.
  • Organization: 512K x16.
  • Power Supply Voltage: 2.7~3.3V.
  • Low Data Retention Voltage: 1.5V(Min).
  • Three State Outputs.
  • Package Type: 48-FBGA-6.00x7.00 CMOS SRAM www. DataSheet4U. com.

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Full PDF Text Transcription for K6F8016U6D (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for K6F8016U6D. For precise diagrams, and layout, please refer to the original PDF.

K6F8016U6D Family Document Title CMOS SRAM www.DataSheet4U.com 512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM Revision History Revision No. History 0.0...

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Voltage Full CMOS Static RAM Revision History Revision No. History 0.0 0.1 Initial draft Revised - Updated DC parameters (ICC1, ICC2, ISB1, IDR) Finalized - Added Lead-Free Products. Draft Date April 26, 2004 September 13, 2004 Remark Preliminary Preliminary 1.0 January 31, 2005 Final The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices. 1 Revision 1.

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