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K6F1016U4B - CMOS SRAM

Key Features

  • Process Technology: Full CMOS.
  • Organization: 64K x16 bit.
  • Power Supply Voltage: 2.7~3.3V.
  • Low Data Retention Voltage: 1.5V(Min).
  • Three state output status and TTL Compatible.
  • Package Type: 48-FBGA-6.00x7.00.

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Full PDF Text Transcription for K6F1016U4B (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for K6F1016U4B. For precise diagrams, and layout, please refer to the original PDF.

K6F1016U4B Family Preliminary CMOS SRAM Document Title 64K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM Revision History Revision No. History 0.0 Initial ...

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ull CMOS Static RAM Revision History Revision No. History 0.0 Initial Draft Draft Date May 2, 2000 Remark Preliminary The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices. - 1 - Revision 0.0 May 2000 K6F1016U4B Family Preliminary CMOS SRAM 64K x 16 bit Super Low Power and Low Voltage Full CMOS Static RAM FEATURES • Process Technology: Full CMOS • Organization: 64K x16 bit • Power Supply Voltage:

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