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STB31L01 - N-Channel Logic Level Enhancement Mode Field Effect Transistor

Datasheet Summary

Features

  • Super high dense cell design for low R DS(ON). Rugged and reliable. TO-263 Package. ID 26A R DS(ON) (m ) Typ 49 @ VGS=10V D G S S TB S E R IE S TO-263(DD-P AK).

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Datasheet Details

Part number STB31L01
Manufacturer SamHop Microelectronics
File Size 131.10 KB
Description N-Channel Logic Level Enhancement Mode Field Effect Transistor
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Full PDF Text Transcription

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Gre r Pro STB31L01 Ver 1.1 S a mHop Microelectronics C orp. N-Channel Logic Level Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V DSS 100V FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. TO-263 Package. ID 26A R DS(ON) (m ) Typ 49 @ VGS=10V D G S S TB S E R IE S TO-263(DD-P AK) ABSOLUTE MAXIMUM RATINGS ( T C=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM E AS PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed a c Limit 100 ±20 TC=25°C TC=70°C 26 21.8 76 36 TC=25°C TC=70°C 75 52.
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