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SPP8863 - N-Channel MOSFET

Datasheet Summary

Description

The SPP8863 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

Features

  • -60V/-18A,RDS(ON)=25mΩ@VGS=-10V.
  • -60V/-12A,RDS(ON)=33mΩ@VGS=-4.5V.
  • Super high density cell design for extremely low RDS (ON).
  • Exceptional on-resistance and maximum DC current capability.
  • TO-252-2L package design PIN.

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Datasheet Details

Part number SPP8863
Manufacturer SYNC POWER
File Size 340.05 KB
Description N-Channel MOSFET
Datasheet download datasheet SPP8863 Datasheet
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SPP8863 P-Channel Enhancement Mode MOSFET DESCRIPTION The SPP8863 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. The SPP8863 has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed. APPLICATIONS  Power Management in Note book  Powered System  DC/DC Converter  Load Switch FEATURES  -60V/-18A,RDS(ON)=25mΩ@VGS=-10V  -60V/-12A,RDS(ON)=33mΩ@VGS=-4.
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