Datasheet4U Logo Datasheet4U.com

SPP8803 - P-Channel MOSFET

Datasheet Summary

Description

The SPP8803 is the Dual P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

Features

  • ‹ -20V/-7.0A,RDS(ON)= 20mΩ@VGS=-4.5V ‹ -20V/-6.0 A,RDS(ON)= 25mΩ@VGS=-2.5V ‹ -20V/-5.0 A,RDS(ON)= 35mΩ@VGS=-1.8V ‹ Super high density cell design for extremely low RDS (ON) ‹ Exceptional on-resistance and maximum DC current capability ‹ TSSOP-8P package design.

📥 Download Datasheet

Datasheet preview – SPP8803

Datasheet Details

Part number SPP8803
Manufacturer SYNC POWER
File Size 210.28 KB
Description P-Channel MOSFET
Datasheet download datasheet SPP8803 Datasheet
Additional preview pages of the SPP8803 datasheet.

📁 Similar Datasheet

Other Datasheets by SYNC POWER

Full PDF Text Transcription

Click to expand full text
SPP8803 P-Channel Enhancement Mode MOSFET DESCRIPTION The SPP8803 is the Dual P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application , notebook computer power management and other battery powered circuits where high-side switching . FEATURES ‹ -20V/-7.0A,RDS(ON)= 20mΩ@VGS=-4.5V ‹ -20V/-6.0 A,RDS(ON)= 25mΩ@VGS=-2.5V ‹ -20V/-5.0 A,RDS(ON)= 35mΩ@VGS=-1.
Published: |