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SPP8813 - N-Channel MOSFET

Datasheet Summary

Description

The SPP8813 is the P-Channel logic enhancement mode power field effect transistor which is produced using super high cell density DMOS trench technology.

Features

  • -80V/-4A, RDS(ON)=85mΩ@VGS=-10V.
  • -80V/-3A, RDS(ON)=100mΩ@VGS=-4.5V.
  • High density cell design for extremely low RDS (ON).
  • Exceptional on-resistance and maximum DC current capability.
  • PPAK5x6-8L package design PIN.

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Datasheet Details

Part number SPP8813
Manufacturer SYNC POWER
File Size 507.22 KB
Description N-Channel MOSFET
Datasheet download datasheet SPP8813 Datasheet
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SPP8813 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPP8813 is the P-Channel logic enhancement mode power field effect transistor which is produced using super high cell density DMOS trench technology. The SPP8813 has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed. APPLICATIONS  Powered System  DC/DC Converter  Load Switch FEATURES  -80V/-4A, RDS(ON)=85mΩ@VGS=-10V  -80V/-3A, RDS(ON)=100mΩ@VGS=-4.
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