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SPP8835 - P-Channel MOSFET

Datasheet Summary

Description

The SPP8835 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

Features

  • -30V/-30A, RDS(ON)=3.3mΩ@VGS=-10V.
  • -30V/-20A, RDS(ON)=5.0mΩ@VGS=-4.5V.
  • Super high density cell design for extremely low RDS(ON).
  • Exceptional on-resistance and maximum DC current capability.
  • PPAK5x6-8L package design PIN.

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Datasheet Details

Part number SPP8835
Manufacturer SYNC POWER
File Size 339.53 KB
Description P-Channel MOSFET
Datasheet download datasheet SPP8835 Datasheet
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SPP8835 P-Channel Enhancement Mode MOSFET DESCRIPTION The SPP8835 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. The SPP8835 has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed. APPLICATIONS  High Frequency Synchronous Buck Converter  DC/DC Power System  Load Switch FEATURES  -30V/-30A, RDS(ON)=3.3mΩ@VGS=-10V  -30V/-20A, RDS(ON)=5.0mΩ@VGS=-4.
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