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SPP8625 - P-Channel MOSFET

Datasheet Summary

Description

The SPP8625 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

Features

  • -12V/-9.0A,RDS(ON)=19.5mΩ@VGS=-4.5V.
  • -12V/-8.5A,RDS(ON)=25mΩ@VGS=-2.5V.
  • Super high density cell design for extremely Low RDS (ON).
  • Exceptional on-resistance and maximum DC current capability.
  • PPAK3x3-8L package design.

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Datasheet Details

Part number SPP8625
Manufacturer SYNC POWER
File Size 432.25 KB
Description P-Channel MOSFET
Datasheet download datasheet SPP8625 Datasheet
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SPP8625 P-Channel Enhancement Mode MOSFET DESCRIPTION The SPP8625 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application, notebook computer power management and other battery powered circuits where high-side switching. FEATURES  -12V/-9.0A,RDS(ON)=19.5mΩ@VGS=-4.5V  -12V/-8.5A,RDS(ON)=25mΩ@VGS=-2.
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