Datasheet4U Logo Datasheet4U.com

SPP8803B - P-Channel MOSFET

Datasheet Summary

Description

The SPP8803B is the Dual P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

Features

  • -20V/-7.0A,RDS(ON)=22mΩ@VGS=-4.5V.
  • -20V/-6.0 A,RDS(ON)=28mΩ@VGS=-2.5V.
  • -20V/-5.0 A, , RDS(ON)=40mΩ@VGS=-1.8V.
  • Super high density cell design for extremely Low RDS (ON).
  • Exceptional on-resistance and maximum DC current capability.
  • TSSOP-8 package design.

📥 Download Datasheet

Datasheet preview – SPP8803B

Datasheet Details

Part number SPP8803B
Manufacturer SYNC POWER
File Size 405.62 KB
Description P-Channel MOSFET
Datasheet download datasheet SPP8803B Datasheet
Additional preview pages of the SPP8803B datasheet.

📁 Similar Datasheet

Other Datasheets by SYNC POWER

Full PDF Text Transcription

Click to expand full text
SPP8803B P-Channel Enhancement Mode MOSFET DESCRIPTION The SPP8803B is the Dual P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application , notebook computer power management and other battery powered circuits where high-side switching . FEATURES  -20V/-7.0A,RDS(ON)=22mΩ@VGS=-4.5V  -20V/-6.0 A,RDS(ON)=28mΩ@VGS=-2.5V  -20V/-5.0 A, , RDS(ON)=40mΩ@VGS=-1.
Published: |