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STPSC31H12C-Y - power Schottky silicon carbide diode

Description

The SiC diode, available in TO-247, is an ultrahigh performance power Schottky rectifier.

It is manufactured using a silicon carbide substrate.

The wide band-gap material allows the design of a low VF Schottky diode structure with a 1200 V rating.

Features

  • AEC-Q101 qualified.
  • No or negligible reverse recovery.
  • Switching behavior independent of temperature.
  • Robust high-voltage periphery.
  • PPAP capable.
  • Operating Tj from -40 °C to 175 °C.

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Datasheet preview – STPSC31H12C-Y

Datasheet Details

Part number STPSC31H12C-Y
Manufacturer STMicroelectronics
File Size 212.05 KB
Description power Schottky silicon carbide diode
Datasheet download datasheet STPSC31H12C-Y Datasheet
Additional preview pages of the STPSC31H12C-Y datasheet.

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Full PDF Text Transcription

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STPSC31H12C-Y Datasheet 2 X 15 A, 1200 V power Schottky silicon carbide diode A1 K A2 TO-247 A2 K A1 Product status link STPSC31H12C-Y Product summary IF(AV) 2 x 15 A VRRM 1200 V Tj (max.) 175 °C VF (typ.) 1.35 V Product label Features • AEC-Q101 qualified • No or negligible reverse recovery • Switching behavior independent of temperature • Robust high-voltage periphery • PPAP capable • Operating Tj from -40 °C to 175 °C • ECOPACK 2 compliant Applications • OBC (on board battery chargers) • PHEV - EV charging stations • Resonant LLC topology • PFC functions (power factor corrector) Description The SiC diode, available in TO-247, is an ultrahigh performance power Schottky rectifier. It is manufactured using a silicon carbide substrate.
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